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RealLight’s diode laser stacks utilize the high reliable AuSn solder technology and low thermal resistance package,providing large duty cycle and high peak power output under different modes of operation.Multi-wavelength output, wide temperature operation and FAC collimation are available upon request. 792nm~818nm and 940nm~960nm output wavelengths are customizable for all product lines.These diode laser stacks are preferred for applications include pumping, material processing, laser illumination, aesthetic treatment scientific research, etc.

Center Wavelength λc(nm) 940 790-812
Wavelength Tolerance δλc(nm) ±5 ±3
Output Power per Bar(W) 100 100 200
Number of Bars 1-2 1-5 1-3
Bar Length(mm) 10 10
Bar-to-Bar Pitch(mm) 0.8 0.43 0.55
Center Wavelength λc(nm) 940 790-812
Wavelength Tolerance δλc(nm) ±5 ±3
Output Power per Bar(W) 100 100 200
Number of Bars 1-2 3-6 2-4
Bar Length(mm) 10 10
Bar-to-Bar Pitch(mm) 0.8 0.43 0.55
Center Wavelength λc(nm) 940 790-812
Wavelength Tolerance δλc(nm) ±5 ±3
Output Power per Bar(W) 100 100 200
Number of Bars 1-2 5-12 5-10
Bar Length(mm) 10 10
Bar-to-Bar Pitch(mm) 0.8 0.43 0.55
Part Number Rxxx±3-Qxxxx-GS07-5*15
Center Wavelength λc(nm) 796~808
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 180
Number of Bars 1~15
Bar-to-Bar Pitch(mm) ~0.4
Part Number Rxxx±5-Q1800-GS06-5*9
Center Wavelength λc(nm) 796~808
Wavelength Tolerance δλc(nm) ±5
Output Power per Bar(W) 200
Number of Bars 9
Bar-to-Bar Pitch(mm) ~0.6
Part Number R808±10-Q480-GS11-10*4
Center Wavelength λc(nm) 808
Wavelength Tolerance δλc(nm) ±10
Output Power per Bar(W) 120
Number of Bars 4
Bar-to-Bar Pitch(mm) 1.65
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 100 200
Number of Bars per Stack 8 6
Bar-to-Bar Pitch(mm) 0.43 0.55
Emission Area(mm×mm) 3×21 2.75×21
Stack-to-Stack Pitch(mm) 1
Number of Stacks 2
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 100 200
Number of Bars per Stack 8 6
Bar-to-Bar Pitch(mm) 0.43 0.55
Emission Area(mm×mm) 3×32 2.75×32
Stack-to-Stack Pitch(mm) 1
Number of Stacks 3
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 100 200
Number of Bars per Stack 9 7
Bar-to-Bar Pitch(mm) 0.43 0.55
Emission Area(mm×mm) 3.5×43 3.3×43
Stack-to-Stack Pitch(mm) 1
Number of Stacks 4
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 100 200
Number of Bars per Stack 1-4 1-3
Bar-to-Bar Pitch(mm) 0.43 0.55
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 100 200
Number of Horizontal Arrays 2
Array-to-Array Pitch 3
Number of Bars per Stack 1-4 1-3
Bar-to-Bar Pitch(mm) 0.43 0.55
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 100 200
Number of Horizontal Arrays 3
Array-to-Array Pitch 3
Number of Bars per Stack 1-4 1-3
Bar-to-Bar Pitch(mm) 0.43 0.55
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 120 250
Number of  Stacks 4
Stack-to-Stack Pitch(mm) 0.5
Maximum Peak Power(W) 1500 2000
Number of Bars per Stack 1-3 1-2
Bar-to-Bar Pitch(mm) 0.43 0.55
Center Wavelength λc(nm) 790-812
Wavelength Tolerance δλc(nm) ±3
Output Power per Bar(W) 120 250
Number of  Stacks 6
Stack-to-Stack Pitch(mm) 0.5
Maximum Peak Power(W) 2200 3000
Number of Bars per Stack 1-3 1-2
Bar-to-Bar Pitch(mm) 0.43 0.55
Cells Number Cells Specifications Crystal Specifications L H Hc T Half-wave Voltage
RLRTP3305 3×3×13 3×3×5 13 8.5 5 3.8 2400V
RLRTP4405 4×4×13 4×4×5 13 9 5 3.3 3200V
RLRTP5505 5×5×13 5×5×5 13 9.5 5 2.8 4000V
RLRTP6606 6×6×15 6×6×6 15 11 6 3.3 4800V
RLRTP7707 7×7×17 7×7×7 17 11.5 6 2.8 3900V
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