GS04 Series Diode laser Vertical stacks
GS04 Series Diode laser Vertical stacks

GS04 packaged diode laser array is RealLight’s self-developed component in us-level applications, which features compact design, high power density,and small emitting size.

Product Parameters
Optical Parameters
Part Number R808±3-Q640-GS04-3*8 R808±3-Q1200-GS04-5*12
Center Wavelength λc(nm) 808
Wavelength Tolerance δλc(nm) ±3
Output power of each Bar(W) 80 100
Bar Numbers             8 12
Spaces between Bars(mm) ~0.4
Spectral Width(FWHM)(nm)        <5
Slope Efficiency of each Bar (W/A) >1.0
Fast Axis Divergence Angle(FWHM)(°) 40
Slow Axis Divergence Angle(FWHM)(°) 10
Temperature Drift of Wavelength(nm/℃) ~0.3
Electrical Parameters
Conversion Efficiency(%) >48
Threshold Current Ith(A) <12 <17
Operating Current Iop(A) <85 <130
Operating Voltage Vop of each Bar(V) <2
Duty Cycle(%) <0.8
Pulse Width(μs) <300
Repetition Rate(Hz) <30
Environment Parameters
Operating Temperature(℃) 0~45
Storage Temperature(℃) 0~55

Pumping source
Scientific research

Key Features

AuSn solder for packaging
Compact design
High peak power density
High reliability

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