GS04 Conduction-cooled Vertical Stacked Diode Laser Array
GS04 conduction-cooled vertical stacked diode laser array is RealLight’s self-developed component in μs-level applications, which features compact design, high power density,and small emitting size.
Product Parameters
| Optical Parameters | ||
| Part Number | R808±3-Q640-GS04-3*8 | R808±3-Q1200-GS04-5*12 |
| Center Wavelength λc（nm） | 808 | |
| Wavelength Tolerance δλc（nm） | ±3 | |
| Output Power per Bar（W） | 80 | 100 |
| Number of Bars | 8 | 12 |
| Bar-to-Bar Pitch（mm） | ~0.4 | |
| Spectral Width（FWHM）（nm） | <5 | |
| Slope Efficiency per Bar (W/A) | >1.0 | |
| Fast Axis Divergence Angle（FWHM）（°） | 40 | |
| Slow Axis Divergence Angle（FWHM）（°） | 10 | |
| Wavelength Temperature Coefficient（nm/℃） | ~0.3 | |
| Electrical Parameters | ||
| EO Conversion Efficiency（%） | >48 | |
| Threshold Current Ith（A） | <12 | <17 |
| Operating Current Iop（A） | <85 | <130 |
| Operating Voltage Vop of each Bar（V） | <2 | |
| Duty Cycle（%） | <0.8 | |
| Pulse Width（μs） | <300 | |
| Repetition Rate（Hz） | <30 | |
| Environment Parameters | ||
| Operating Temperature（℃） | 0~45 | |
| Storage Temperature（℃） | 0~55 | |
1.Wavelengths from 940nm to 960nm available upon request.
2.Wavelengths from 792nm to 818nm available upon request.
3.Do not operate it beyond normal operating conditions, otherwise, the service life of the device might be shortened.
4.Make sure that there is no condensation in operating or storage environment.
5.All above parameters are measured in QCW mode.
Application
Pumping source
Scientific research
Key Features
AuSn solder for packaging
Compact design
High peak power density
High reliability
