GS1 Series Diode laser Vertical stacks
RealLight offers vertical diode laser stack and horizontal diode laser stack. These multi-bar modules provide large duty cycle and high peak power output up to 1000W at 808nm or 940nm output wavelength under QCW operation
Product Parameters
| Parameters | Unit | R808±3-600-GS1-3X1 | R808±3-1000-GS1-5X1 | |
| Optical | Center Wavelength | nm | 808±3 | 808±3 |
| Spectral Width（FWHM） | nm | ≤5 | ≤5 | |
| Duty Ratio | % | ≤2 | ≤2 | |
| Peak Power | W | 600 | 1000 | |
| Quantity of Bars | – | 3 | 5 | |
| Width of Bars | mm | 10 | 10 | |
| Spaces between Bars | mm | 0.4 | 0.4 | |
| Beam divergence of fast axis（FWHM） | ° | 35 | 35 | |
| Beam divergence of slow axis（FWHM） | ° | 10 | 10 | |
| Polarization | – | TE | TE | |
| Temperature Drift of Wavelength | nm/℃ | 0.28 | 0.28 | |
| Electrical | Operating Current | A | 200 | 200 |
| Threshold Current | A | 25 | 25 | |
| Operating Voltage | V | 6 | 10 | |
| Conversion Efficiency | % | 50 | 50 | |
| Environment | Operating Temperature | ℃ | -20 ~ 70 | -20 ~ 70 |
| Storage Temperature | ℃ | -40 ~ 80 | -40 ~ 80 |
Application
Pumping source
Material processing
Laser lighting
Medical cosmetology
Scientific research applications
Key Features
Sealed package, compact design
AuSn sintering
Available to work under high-temperature
High power density
High reliability
